Nanotribological Properties Of Epitaxial Graphene Grown On Cterminated Face Of Silicon Carbide Semiconductor
Abstract
The frictional properties of mono-layer and multilayer epitaxial graphene grown on the C terminated face of SiC has been
investigated by using atomic force microscopy measurements. Epitaxially grown graphene samples were characterized by
Raman spectrosc
URI
https://app.trdizin.gov.tr/makale/TXpnNU9UTXpNdz09/nanotribological-properties-of-epitaxial-graphene-grown-on-cterminated-face-of-silicon-carbide-semiconductorhttps://dspace.yasar.edu.tr/xmlui/handle/20.500.12742/18140
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