dc.contributor.author | Fidan, M. | |
dc.contributor.author | Unverdi, O. | |
dc.contributor.author | Celebi, C. | |
dc.date.accessioned | 2021-11-04T11:24:58Z | |
dc.date.available | 2021-11-04T11:24:58Z | |
dc.date.issued | 2021 | |
dc.identifier.issn | 0924-4247 | |
dc.identifier.uri | https://dspace.yasar.edu.tr/xmlui/handle/20.500.12742/11559 | |
dc.description.abstract | his work reports the impact of junction area on the device performance parameters of Graphene/n-Silicon (Gr/n-Si) based Schottky photodiodes. Herein, three batches of Gr/n-Si photodiode samples were produced based on various sized CVD grown monolayer graphene layers transferred on individual n-Si substrates. The fabricated devices exhibited strong Schottky diode character and had high spectral sensitivity at 905 nm peak wavelength. The optoelectronic measurements showed that the spectral response of Gr/n-Si Schottky photodiodes has a linear dependence on the active junction area. The sample with 20 mm2 junction area reached a spectral response of 0.76 AW−1, which is the highest value reported in the literature for self-powered Gr/n-Si Schottky photodiodes without the modification of graphene electrode. In contrast to their spectral responsivities, the response speed of the samples were found to be lowered as a function of the junction area. The experimental results demonstrated that the device performance of Gr/n-Si Schottky photodiodes can be modified simply by changing the size of the graphene electrode on n-Si without need of external doping of graphene layer or engineering Gr/n-Si interface. This study may serve towards the standardization of junction area for the development of high performance Gr/Si based optoelectronic devices such as solar cells and photodetectors operating in between the ultraviolet and near-infrared spectral region. | en_US |
dc.language.iso | English | en_US |
dc.publisher | Elsevier | en_US |
dc.rights | info:eu-repo/semantics/openAccess | en_US |
dc.subject | Detectivity | en_US |
dc.subject | Graphene | en_US |
dc.subject | Noise equivalent power | en_US |
dc.subject | Response speed | en_US |
dc.subject | Responsivity | en_US |
dc.subject | Schottky junction | en_US |
dc.title | Junction area dependent performance of graphene/silicon based self-powered Schottky photodiodes | en_US |
dc.type | Article | en_US |
dc.relation.journal | Sensors and Actuators, A: Physical | en_US |
dc.identifier.doi | 10.1016/j.sna.2021.112829 | en_US |
dc.contributor.department | Department of Electrical and Electronic Engineering | en_US |
dc.identifier.issue | 331 | en_US |
dc.identifier.wos | http://apps.webofknowledge.com/Search.do?product=WOS&SID=C2YzAB9Edp81Rck1NbT&search_mode=GeneralSearch&prID=28238fac-a0a4-45b7-afc0-42b8e71ef752 | en_US |
dc.identifier.scopus | https://www.scopus.com/record/display.uri?eid=2-s2.0-85108910210&origin=SingleRecordEmailAlert&dgcid=raven_sc_search_en_us_email&txGid=98ed0102b0df4fb92bf0489c819fd5fd | en_US |
dc.contributor.yasarauthor | 0000-0001-9994-3487: Özhan Ünverdi | en_US |